Vacuum Deposition System
| Vacuum Deposition Equipment | Vacuum deposition ALS E-100 |
Evaporation source : 8 sources (co-evaporation 3 sources) | Chitose Institute of Science and Technology |
|---|---|---|---|
| Vacuum deposition ULVAC VPC-260 |
Evaporation source : 1 source Ultimate pressure 6.5 × 10-4Pa |
Chitose Institute of Science and Technology | |
| Vacuum deposition ANELVA L-043E-TN |
Evaporation source 3 : source Ultimate pressure 5 × 10-5Pa |
Chitose Institute of Science and Technology | |
| Sputtering equipment | Sputtering equipment ULVAC MUE-ECO-C2 |
Sputter cathode : 2inch magnetron formula × 2 Substrate heating : up to 300 °C |
Chitose Institute of Science and Technology |
| Trilateralism sputtering equipment ULVAC Service SMR 2304E |
Japan Advanced Institute of Science and Technology | ||
| Sputtering equipment ULVAC SPC-2000HC |
13.56MHz 200W | Nagoya Institute of Technology | |
| Inductively coupled RF plasma enhancement oxidation sputtering equipment ULVAC MB02-5002 |
Sample size：max 2 inch | Osaka University | |
| RF sputter Sanyu Electron SVC-700LRF |
Sample size：max 4 inch | Osaka University | |
| Thin film formation equipment | ELIONIX EIS-220 | Japan Advanced Institute of Science and Technology | |
| Artificial superlattice thin film formation system (PLD) | Artificial superlattice thin film formation system (PLD) Seinan industries PLO-020R |
ArF laser : 193nm, ave.100mJ Sample heating : up to 850°C Oxygen partial pressure : 10-6 – 5Pa Sample size : max 1 inch |
Osaka University |
| Organic thin film formation equipment | Organic thin film formation equipment Seinan industries VCH-020R |
2Ch K-cell Sample size : max 1inch |
Osaka University |
