課題番号 ：S-16-KU-0021(NPQ16010)
利用形態 ：機器利用
利用課題名（日本語） ：ナノカーボンのドーピングによるキャリア注入に関する研究ProgramTitle(English) ：Study of carrier injection onto nanocarbon by doping
利用者名（日本語） ：速水 真也, Md. Saidul Islam
Username(English) ：S. Hayami, Md. Saidul Islam
所属名（日本語） ：熊本大学大学院先端科学研究部
Affiliation (English) ：Department of chemistry, Graduate School of Science and Technology,
Kumamoto University

１．概要（Summary ）
Thermo electric devices as green renewable energy sources have been focused in recent years. In carbon based thermoelectric devices simultaneous

Fig.01: Mechanism of the thermoelectric devices.
existence of p-type and n-type semiconductor is essential (fig.1). CNTs are naturally p-type because exposure to the oxygen in the air causes the fermi level to shift towards the valence band. In this work, conversion of physical properties from p-type to n-type semiconductor using doped nano-carbon such as carbon nanotube (CNT) has been actively conducted. We focus on air stability after doping. For that purpose, an absorption spectrometer and a photoelectron spectrometer are used.
２．実験（Experimental）
We prepared a series of DMBI-doped CNT. The as prepared samples were characterized by using SEM, XPS, XRD and IR analysis. Seeback coefficient of each sample was measured in order to confirm the type (p-type/n-type).
Instrument used in Kyushu University: SolidSpec-3700 DUV, manufactured by Shimadzu Corporation (electronic state measurement system) and ZEM-3 (ULVAC) for measuring seeback coefficient.
３．結果と考察（Results and Discussion）
We success to get n-type CNT based semiconductor which was air stable at least 10 day without significant change (fig.2).

Fig.2: Stability of CNT based n- type semiconductor
Current study suggested that doped CNT can be used for thermoelectric device in near future.
４．その他・特記事項（Others）
Teacher in charge: Tsuyohiko Fujigaya
５．論文・学会発表（Publication/Presentation）
“Carbon sphere oxide with thermal stable high proton conductivity,” Md. Saidul Islam, ICAST2016, 2016.12.8
６．関連特許（Patent）
None