利用報告書
Study on impurities at the interface between oxide semiconductor and gate insulator.
Study on impurities at the interface between oxide semiconductor and gate insulator.
Institutes
- Chitose Institute of Science and Technology
- Tohoku University
- National Institute for Materials Science
- Shinshu University
- Institute for Molecular Science
- Nagoya University
- Nagoya Institute of Technology
- Japan Advanced Institute of Science and Technology
- Nara Institute of Science and Technology
- Osaka University
- Kyushu University
- Nanotech Japan
- Microstructural Characterization Platform
- Nanofabrication Platform
Molecule and Material Synthesis Platform
National Institutes of Natural Sciences Institute for Molecular Science
38 Nishigo-Naka,Myodaiji, Okazaki 444-8585, Japan
TEL +81-564-55-7447