課題番号 ：S-19-SH—0007
利用形態 ：共同研究型支援
利用課題名（日本語） ：酸化物系エレクトロニクスデバイス（メモリスタ、FET、センサー、など）の開発
Program Title (English) ：Development of oxide based electronic devices such as memristor, FET, sensors, and etc.
利用者名（日本語） ：シャイバル　ムカジー
Username (English) ：SHAIBAL MUKHERJEE
所属名（日本語） ：インド工科大学、インドール校
Affiliation (English) ：Indian Institute of Technology Indore (IITI)

１．概要（Summary ）
This joint project was focused on the implementation of oxide based electronic devices such as memristor, FET, and gas sensors. In the early months of 2019, we focus on the characterization of yttrium oxide based memristor. In the late months of 2019, we focus on the analysis of FET devices, having MgZnO/CdZnO heterojunction and multi-quantum-well (MQW) structures. The characteristic of these devices is mainly depending on the defect density of active materials used, and the junction properties is also critical. Accordingly, the detailed structural analysis using advanced facilities such as TEM and STM is quite important.
２．実験（Experimental）
The following facilities of Shinshu University such as high resolution TEM (JOEL JEM2100, Hitachi STEM (HD2300A), and STM (Unisoku) were utilized for the detailed analyses of the memristors and FETs, which were fabricated at the Indian Institute of Technology Indore (IITI).
３．結果と考察（Results and Discussion）
From this joint project, we are succeeded in clarifying the effect of surface roughness on the characteristic of Yttrium oxide-based memristor. We also succeeded in applying this device in synaptic applications. The detailed of these results are reported elsewhere (1-2).
For the development of FET, which is focused on the later period, we were able to introduce the yttria spacer layer in MgZnO/CdZnO heterojunction FET as shown in Fig. 1 that improves the overall conductance and electron mobility. This result is submitted to the IEEE Transactions on Electron Devices for publication and now it is under the reviewing process.

４．その他・特記事項（Others）
「なし。」
５．論文・学会発表（Publication/Presentation）
(1) Mangal Das, Sanjay Kumar, Md. ArifKhan, Biswajit Mandal, Myo Than Htay, Shaibal Mukherjee, Effect of Roughness on the Resistive Switching of Yttrium Oxide-Based System, EM-NANO 2019, SA-3 2019(Jun. 21)
(2) Sanjay Kumar, Mangal Das, Amitesh Kumar, Myo Than Htay, and Shaibal Mukherjee, Yttrium oxide based resistive switching device for synaptic applications, 6th Nano Today Conference, Lisbon, Portugal, 1031 2019(Jun. 20 )
６．関連特許（Patent）
「なし。」