Fabrication of ferroelectric memory cell structure for high density device integration
T. Saito, H. Kashima, A. Kobayashi, M. Rindo, Y. Ishida, I. Matsumoto, K. Fuji,S. Shimizu, H. Matsushima
Dept. of Chem. Eng., Grad. School of Eng., Osaka Prefecture University.
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