利用報告書

Fabrication of ferroelectric memory cell structure for high density device  integration
T. Saito, H. Kashima, A. Kobayashi, M. Rindo, Y. Ishida, I. Matsumoto, K. Fuji,S. Shimizu, H. Matsushima
Dept. of Chem. Eng., Grad. School of Eng., Osaka Prefecture University.

Sorry, this entry is only available in 日本語.

©2026 Molecule and Material Synthesis Platform All rights reserved.